Semiconductor device and a method for manufacturing the same

ABSTRACT

A semiconductor device includes a semiconductor substrate provided with an active region including a gate forming area, a source forming area and a drain forming area. A recess is formed in the gate forming area. A gate is formed over the gate forming area that is formed with the recess and includes an insulation layer formed at an upper end portion of a side wall of the recess that is in contact with the source forming area. A source area and a drain area are formed in the active region on opposite sides of the gate.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority to Korean patent applicationnumber 10-2007-0049654 filed on May 22, 2007, which is incorporatedherein by reference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device, and moreparticularly, to a semiconductor device capable of reducing the effectof gate induced drain leakage (GIDL), and a method for manufacturing thesame.

As high integration of a semiconductor device has continued to proceed,a channel length of a transistor has been shortened and an ionimplantation concentration of source and drain areas has been increased.As a result of these changes, a short channel effect has became aserious problem in which a threshold voltage (Vt) is lowered as chargesharing between the source area and the drain area is increased. Inaddition, controllability of a gate is reduced. Also, a refresh propertydeteriorates due to an increase in junction leakage current that resultsfrom an increase in an electric field in the source area and the drainarea. Therefore, conventional semiconductor devices with a planarchannel offer limited capability for overcoming problems that resultfrom high integration.

For this reason, research has been actively performed to fabricate asemiconductor device with a recess channel, which is capable ofimproving an effective channel length.

Hereinafter, a method for manufacturing a semiconductor device having aconventional recess channel will be briefly described.

After an isolation layer is formed in an isolation region of asemiconductor substrate having an active region including a gate formingarea and the isolation region, a screen oxide layer is formed over anentire surface of the semiconductor substrate that is formed with theisolation layer. Ion implantation is performed to adjust a thresholdvoltage. An ion implantation of the source/drain is sequentiallyperformed on the semiconductor substrate formed with the screen oxidelayer. The screen oxide layer is then removed.

After a mask pattern that is used for exposing the gate forming area ofthe active region is formed over the ion implanted semiconductorsubstrate, the portion of the semiconductor substrate exposed by themask pattern is etched to form a recess in the gate forming area of theactive region. The mask pattern is then removed.

After a gate insulation layer is formed over the semiconductor substrateincluding the recess, a gate conductive layer is formed over the gateinsulation layer to fill in the recess. The gate insulation layer isformed as an oxide layer and the gate conductive layer is formed as alaminated layer of a polysilicon layer and a tungsten layer. A hard masklayer made of a nitride layer is then formed over the gate conductivelayer.

By patterning the hard mask layer, the gate conductive layer, and thegate insulation layer, a transistor having a recess channel is formed inthe gate forming area that includes the recess.

A series of known follow up processes are sequentially performed,thereby completing formation of a semiconductor device having the recesschannel.

Meanwhile, as aforementioned, as a cell size has been scaled down withhigh integration of the semiconductor device, a channel dopingconcentration has been excessively increased to maintain the thresholdvoltage at the same level. As a result, the refresh propertydeteriorates.

For this reason, in order to prevent deterioration of the refreshproperty, a method has been proposed to adjust the threshold voltage(Vt) by applying a P+ polysilicon layer instead of an N+ polysiliconlayer.

When applying the P+ polysilicon layer instead of the N+ polysiliconlayer, it is possible to significantly decrease the channel dopingconcentration. The threshold voltage can be ensured even with a lowchannel dose through a difference in band gap voltage of thesemiconductor substrate made of silicon. Also, the refresh property canbe improved.

However, in the case of applying the P+ polysilicon layer to the recesschannel structure, a band gap is seriously bent due to a Fermi leveldifference, e.g., approximately 1.1V, between the source/drain area andthe gate. As a result, a GIDL phenomenon results at an upper end portionof a side wall of the recess adjacent to the source area, which in turnincreases the leakage current and deteriorates the refresh property.

In a GIDL phenomenon, current leaks in the form of an electric field andis concentrated into both edge portions where the gate and thesemiconductor substrate contact each other. GIDL is a problem whichshould be addressed to improve device properties and reliability. Also,GIDL is a major factor in reducing a refresh time of the device.

BRIEF SUMMARY OF THE INVENTION

Embodiments of the present invention are directed to a semiconductordevice, which is capable of reducing the effect of a GIDL phenomenonwhen applying a P+ polysilicon layer to the recess channel structurethereby improving device properties and reliability, and a method formanufacturing the same.

In one embodiment, a semiconductor device may include a semiconductorsubstrate provided with an active region including a gate forming area,a source forming area and a drain forming area. The gate forming area isformed with a recess. A gate formed over the gate forming area is formedwith the recess and includes an insulation layer formed at an upper endportion of a side wall of the recess that is in contact with the sourceforming area. A source area and a drain area are formed in the activeregion on opposite sides of the gate.

The semiconductor device may further include a P+ polysilicon layerfilled in the recess as a gate conductive layer.

The recess has a depth that is deeper than a lower surface of the sourcearea and the drain area.

The insulation layer has a width of approximately ⅕ to ½ of a criticaldimension of the gate.

The insulation layer has a thickness of approximately 100 to 200 Å froma surface of the semiconductor substrate.

The insulation layer is formed so that its lower surface is positionedsubstantially similar to a lower surface of the source area.

The insulation layer is formed as an oxide layer.

In another embodiment, a method for manufacturing a semiconductor devicemay comprise performing source/drain ion implantation on a semiconductorsubstrate having an active region including a gate forming area to forma source area and a drain area. A recess is formed in the gate formingarea of the semiconductor substrate. A gate insulation layer is formedover the semiconductor substrate including the recess. A first gateconductive layer is formed over the gate insulation layer to fill in therecess. The first gate conductive layer is etched to remove a portion ofthe first gate conductive layer formed at an upper end portion of theside wall of the recess that is in contact with the source area. Aninsulation layer is formed at the upper end portion of the side wall ofthe recess from which the first gate conductive layer is removed. Asecond gate conductive layer is formed over the insulation layer and thefirst gate conductive layer. A third gate conductive layer and a hardmask layer are formed over the second gate conductive layer. The hardmask layer, the third gate conductive layer, the second gate conductivelayer, the first gate conductive layer, the insulation layer, and thegate insulation layer are etched to form a gate.

The method for manufacturing a semiconductor device may further includeforming a screen oxide layer over the semiconductor substrate. Beforethe formation of the source area and the drain area, a semiconductorsubstrate is formed with the screen oxide layer to form a thresholdvoltage adjusting ion implantation layer that is positioned below thesource/drain area and implanted with ions to adjust the thresholdvoltage.

The recess is formed to a depth deeper than a lower surface of thesource area and the drain area.

The first gate conductive layer is formed as a P+ polysilicon layer.

The etching of the first gate conductive layer includes forming a maskpattern for exposing a portion of the first gate conductive layer formedat a portion of the recess that is in contact with the source area overthe first gate conductive layer. The portion of the first gateconductive layer exposed by the mask pattern is etched. The mask patternis then removed.

The insulation layer is formed to have a thickness of approximately 100to 200 Å from a surface of the semiconductor substrate.

The insulation layer has a width of approximately ⅕ to ½ of a criticaldimension of the gate.

The insulation layer is formed so that its lower surface is positionedsubstantially similar to a lower surface of the source area.

The insulation layer is formed as an oxide layer.

The method for manufacturing a semiconductor device may further includeplanarizing a surface of the second gate conductive layer, after theformation of the second gate conductive layer and before the formationof the third gate conductive layer.

In yet another embodiment, a method for manufacturing a gate of asemiconductor device may include forming a recess in a gate forming areaof a semiconductor substrate having an active region that includes thegate forming area. A gate insulation layer is formed over thesemiconductor substrate including the recess. A first gate conductivelayer is formed over the gate insulation layer to fill in the recess.The first gate conductive layer is etched to remove a portion of thefirst gate conductive layer that corresponds to an upper end portion ofa side of the recess. An insulation layer is formed at the upper endportion of the side of the recess from which the portion of the firstgate conductive layer is removed. A second gate conductive layer isformed over the insulation layer and the first gate conductive layer. Athird gate conductive layer and a hard mask layer are formedsequentially over the second gate conductive layer. The hard mask layer,the third gate conductive layer, the second gate conductive layer, thefirst gate conductive layer, the insulation layer and the gateinsulation layer are then etched.

The recess is formed to a depth deeper than a lower surface of thesource area and the drain area.

The first gate conductive layer is formed as a P+ polysilicon layer.

The insulation layer is formed to have a thickness of approximately 100to 200 Å from a surface of the semiconductor substrate.

The insulation layer has a width of approximately ⅕ to ½ of a criticaldimension of the gate.

The insulation layer is formed as an oxide layer.

The insulation layer is formed so that its lower surface is positionedsubstantially similar to a lower surface of the source area.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view illustrating a semiconductor device inaccordance with an embodiment of the present invention.

FIGS. 2A through 2I are cross-sectional views illustrating the processsteps of a method for manufacturing the semiconductor device inaccordance with an embodiment of the present invention.

DESCRIPTION OF SPECIFIC EMBODIMENTS

A preferred embodiment of the present invention is directed to asemiconductor device in which an insulation layer is formed to athickness that is selectively thicker at an upper end portion of a sidewall of a recess. The upper end portion of the side wall is in contactwith a source area when applying P+ polysilicon layer to a recesschannel structure.

An electric field in edge portions where a gate and a semiconductorsubstrate contact each other, i.e. between the source area and P+polysilicon gate, is decreased to reduce the effect of a GIDLphenomenon. Due to this decrease in the electric field, a cell propertyand a refresh property of a device can be improved.

FIG. 1 is a cross-sectional view illustrating a semiconductor device inaccordance with an embodiment of the present invention.

A gate forming area of a semiconductor substrate 100 is formed within anactive region that includes the gate forming area, a source formingarea, a drain forming area, and a recess H that has a depth deeper thanthe source and drain forming areas. A gate 126 is formed in the gateforming area, which includes the recess H and, also, a source area 108 aand a drain area 108 b that are formed in the active region on oppositesides of the gate 126. The gate 126 includes a gate insulation layer 112that is formed over a surface of the recess H. An insulation layer 118is formed at an upper end portion of the recess H that is in contactwith the source area 108 a. A gate conductive layer 114, 120, 122 isformed over the gate insulation layer 112. A hard mask layer 124 isformed over the gate conductive layer 114, 120, and 122.

The gate insulation layer 112 and the insulation layer 118 are formed asan oxide layer. The gate conductive layer 114, 120, 122 is formed as alaminated layer of P+ polysilicon layers 114, 120 and a metal basedlayer 122. The hard mask layer 124 is formed as a nitride layer. Theinsulation layer 118 has a lower surface that is positionedsubstantially similar to a lower surface of the source area.

The insulation layer 118 has a width of approximately ⅕ to ½ of acritical dimension (CD) of the gate 126 and is formed to have athickness more than approximately 100 Å, and preferably 100 to 200 Å,from a surface of the semiconductor substrate.

In FIG. 1, reference symbols 102, 106, 128, and 130, which are notdescribed, denote an isolation layer, a threshold voltage adjusting ionimplantation layer, a light oxide layer, and a spacer, respectively.

In the semiconductor device in accordance with the present invention,the insulation layer 118 is selectively formed at the side wall of therecess H that is in contact with the source area 108 a. As a result, amagnitude of an electric field in both edges of the recess H isdecreased thereby reducing the effect of the GIDL phenomenon.Accordingly, this improvement can prevent the deterioration of therefresh property caused by the GIDL phenomenon, which results in betterdevice properties and reliability.

Hereinafter, a method for manufacturing the semiconductor device inaccordance with an embodiment of the present invention will be describedwith reference to FIGS. 2A through 2I.

Referring to FIG. 2A, an isolation layer 202 defining an active regionis formed in an isolation region of a semiconductor substrate 200 havingthe active region that includes a gate forming area and the isolationregion. A screen oxide layer 204 is formed over an entire surface of thesemiconductor substrate 200 including the isolation layer 202. Athreshold voltage adjusting ion implantation process (not shown) isconducted to form the threshold voltage adjusting ion implantation layer206 in the semiconductor substrate 200, which is coated with the screenoxide layer 204. A source/drain ion implantation process is performed onthe semiconductor substrate 200 with the threshold voltage adjusting ionimplantation layer 206 to form a junction area 208 at an upper portionof the threshold voltage adjusting ion implantation layer 206 in thesemiconductor substrate 200. N-type impurities are used in thesource/drain ion implantation process to form the junction area 208,which is an N-type ion implantation layer.

Referring to FIG. 2B, the screen oxide layer is removed. A recess mask210 for exposing the gate forming area is formed over the semiconductorsubstrate 200. A portion of the semiconductor substrate 200 exposed bythe recess mask 210 is etched to form a recess H in the gate formingarea. The junction area is separated by the recess H to form a sourcearea 208 a and a drain area 208 b. The recess H is formed by a dry etchprocess to have a depth deeper than a lower surface of the source area208 a and the drain area 208 b.

Referring to FIG. 2C, the recess mask is removed through a knownprocess. A gate insulation layer 212 is formed over the semiconductorsubstrate 200 and the recess H. The gate insulation layer 212 is formedas an oxide layer through a thermal oxidation process.

Referring to FIG. 2D, a first gate conductive layer 214 is formed overthe gate insulation layer 212 to fill in the recess H. The first gateconductive layer 214 is formed as a P+ polysilicon layer and a surfaceof the layer is planarized after a deposition.

Referring to FIG. 2E, a mask pattern 216 is formed over the first gateconductive layer 214 to expose a portion of the first gate conductivelayer 214 that is formed over a portion of recess H having an upper endportion of a sidewall that is in contact with the source area 208 a. Theportion of the first gate conductive layer 214 exposed by the maskpattern 216 is etched by some thickness. The etching is performed in adry etch manner. In addition, the etching is performed so that theportion of the first gate conductive layer 214 is etched to a depthsubstantially similar to a depth of a lower surface of the source area208 a and the drain area 208 b. As a result of the etching, the portionof the first gate conductive layer 214 is removed at the upper endportion of the side wall of the recess H that is in contact with thesource area 208 a.

Referring to FIG. 2F, the mask pattern is removed. The upper portion ofthe side wall of the recess H, in which the first gate conductive layer214 is removed, is filled in with an insulation layer 218 that ispositioned substantially similar to a lower surface of the source area208 a. The insulation layer 218 is formed as an oxide layer and isformed to have a width of approximately less than half, and preferably ⅕to ½, of a gate CD. In addition, the insulation layer 218 is formed tohave a thickness of more than approximately 100 Å, and preferably 100 to200 Å, from the surface of the semiconductor substrate 200 in order toprotect the semiconductor substrate 200.

Hereinafter, in the present invention, the insulation layer 218 isselectively formed at the upper end portion of a side wall of the recessH that is in contact with the source area 208 a. The insulation layer218 is formed to be thicker at the upper end portion of the side wall ofthe recess H than at the other portions. Thus, the effect of GIDLphenomenon can be effectively reduced because the GIDL phenomenon isinversely proportional to a thickness of the insulation layer.

Referring to FIG. 2G, a second gate conductive layer 220 is formed overthe insulation layer 218 and the first gate conductive layer 214. Thesecond gate conductive layer 220 is formed as a P+ polysilicon layer. Asurface of the layer is also planarized after the deposition.

Referring to FIG. 2H, a third gate conductive layer 222 and a hard masklayer 224 are sequentially formed over the second gate conductive layer220. The third gate conductive layer 222 is formed as a metal basedlayer; for example, a tungsten layer. The hard mask layer 224 is formedas a nitride layer.

Referring to FIG. 2I, the hard mask layer 224, the third gate conductivelayer 222, the second gate conductive layer 220, the first gateconductive layer 214, the insulation layer 218, and the gate insulationlayer 212 are patterned in a dry etch manner to form a gate 226 with aP+ polysilicon layer in the gate forming area including the recess H. Alight oxide layer 228 is formed along each side wall of the gate 226between the upper surface of the source/drain areas and the hard masklayer 224. A spacer 230 is formed along each side wall of the gate 226including the light oxide layer 228 and the hard mask layer 224.

Though not shown, a series of known follow up processes is sequentiallyperformed to complete the semiconductor device in accordance with thepresent invention.

As is apparent from the above description, in an embodiment of thepresent invention, a thicker insulation layer is selectively formed atthe upper end portion of the side wall of the recess that is in contactwith the source area when applying P+ polysilicon layer to a recesschannel structure. As a result, the effect of the GIDL phenomenon thatoccurs at the upper end portion of the side wall of the recess can bereduced. Therefore, by reducing the effect of the GIDL phenomenon, therefresh property can be improved; thus, device properties andreliability can be enhanced.

Although specific embodiments of the present invention have beendescribed for illustrative purposes, those skilled in the art willappreciate that various modifications, additions and substitutions arepossible, without departing from the scope and the spirit of theinvention as disclosed in the accompanying claims.

1. A semiconductor device comprising: a semiconductor substratecomprising an active region including a gate forming area, a sourceforming area and a drain forming area, the gate forming area beingformed with a recess; a gate formed over the gate forming area formedwith the recess, the gate comprising an insulation layer formed at anupper end portion of a side wall of the recess, the upper end portion ofthe side wall contacting the source forming area; and a source area anda drain area formed in the active region on opposite sides of the gate.2. The semiconductor device according to claim 1, further comprising aP+ polysilicon layer that fills in the recess, the P+ polysilicon layercomprising a gate conductive layer.
 3. The semiconductor deviceaccording to claim 1, wherein the recess has a depth that is deeper thana lower surface of the source area and the drain area.
 4. Thesemiconductor device according to claim 1, wherein the insulation layerhas a width of approximately ⅕ to ½ of a critical dimension of the gate.5. The semiconductor device according to claim 1, wherein the insulationlayer has a thickness of approximately 100 to 200 Å from a surface ofthe semiconductor substrate.
 6. The semiconductor device according toclaim 1, wherein the insulation layer is formed such that a lowersurface of the insulation layer is positioned substantially similar to alower surface of the source area.
 7. A method for manufacturing asemiconductor device, the method comprising: performing source/drain ionimplantation on a semiconductor substrate having an active regionincluding a gate forming area to form a source area and a drain area;forming a recess in the gate forming area of the semiconductorsubstrate; forming a gate insulation layer over the semiconductorsubstrate including the recess; forming a first gate conductive layerover the gate insulation layer to fill in the recess; etching the firstgate conductive layer to remove a portion of the first gate conductivelayer formed at an upper end portion of the side wall of the recess thatis in contact with the source area; forming an insulation layer at theupper end portion of the side wall of the recess from which the firstgate conductive layer is removed; forming a second gate conductive layerover the insulation layer and the first gate conductive layer; forming athird gate conductive layer and a hard mask layer over the second gateconductive layer; and etching the hard mask layer, the third gateconductive layer, the second gate conductive layer, the first gateconductive layer, the insulation layer, and the gate insulation layer toform a gate.
 8. The method for manufacturing a semiconductor deviceaccording to claim 7, further comprising, before forming the source areaand the drain area: forming a screen oxide layer over the semiconductorsubstrate; and performing a threshold voltage adjusting ion implantationon the semiconductor substrate formed with the screen oxide layer toform a threshold voltage adjusting ion implantation layer under thesource area and the drain area
 9. The method for manufacturing asemiconductor device according to claim 7, wherein the recess is formedto a depth deeper than a lower surface of the source area and the drainarea.
 10. The method for manufacturing a semiconductor device accordingto claim 7, wherein the first gate conductive layer comprises a P+polysilicon layer.
 11. The method for manufacturing a semiconductordevice according to claim 7, wherein etching the first gate conductivelayer comprises: forming a mask pattern for exposing a portion of thefirst gate conductive layer formed at a portion of the recess that is incontact with the source area over the first gate conductive layer;etching the portion of the first gate conductive layer exposed by themask pattern; and removing the mask pattern.
 12. The method formanufacturing a semiconductor device according to claim 7, wherein theinsulation layer is formed to have a thickness of approximately 100 to200 Å from a surface of the semiconductor substrate.
 13. The method formanufacturing a semiconductor device according to claim 7, wherein theinsulation layer has a width of approximately ⅕ to ½ of a criticaldimension of the gate.
 14. The method for manufacturing a semiconductordevice according to claim 7, wherein the insulation layer is formed sothat a lower surface thereof is positioned substantially similar to alower surface of the source area.
 15. The method for manufacturing asemiconductor device according to claim 7, further comprising afterforming the second gate conductive layer and before forming the thirdgate conductive layer: planarizing a surface of the second gateconductive layer.
 16. A method for manufacturing a gate of asemiconductor device, comprising: forming a recess in a gate formingarea of a semiconductor substrate having an active region including thegate forming area; forming a gate insulation layer over thesemiconductor substrate including the recess; forming a first gateconductive layer over the gate insulation layer to fill in the recess;etching the first gate conductive layer to remove a portion of the firstgate conductive layer that corresponds to an upper end portion of a sideof the recess; forming an insulation layer at the upper end portion ofthe side wall of the recess from which the portion of the first gateconductive layer is removed; forming a second gate conductive layer overthe insulation layer and the first gate conductive layer; formingsequentially a third gate conductive layer and a hard mask layer overthe second gate conductive layer; and etching the hard mask layer, thethird gate conductive layer, the second gate conductive layer, the firstgate conductive layer, the insulation layer, and the gate insulationlayer to form a gate.
 17. The method for manufacturing a gate of asemiconductor device according to claim 16, wherein the recess is formedto a depth deeper than a lower surface of the source area and the drainarea.
 18. The method for manufacturing a gate of a semiconductor deviceaccording to claim 16, wherein the first gate conductive layer comprisesa P+ polysilicon layer.
 19. The method for manufacturing a gate of asemiconductor device according to claim 16, wherein the insulation layeris formed to have a thickness of approximately 100 to 200 Å from asurface of the semiconductor substrate.
 20. The method for manufacturinga gate of a semiconductor device according to claim 16, wherein theinsulation layer has a width of approximately ⅕ to ½ of a criticaldimension of the gate.
 21. The method for manufacturing a gate of asemiconductor device according to claim 16, wherein the insulation layeris formed such that a lower surface thereof is positioned substantiallysimilar to a lower surface of the source area.
 22. A method formanufacturing a semiconductor device, the method comprising: forming asemiconductor substrate with an active region comprising a gate formingarea, a source forming area and a drain forming area; forming a recessin the gate forming area; forming a gate over the gate forming areaformed with the recess, wherein the gate comprises an insulation layerformed at an upper end portion of a side wall of the recess, the upperend portion of a side wall of the recess being in contact with thesource forming area; and forming a source area and a drain area in theactive region on opposite sides of the gate.
 23. The method formanufacturing a gate of a semiconductor device according to claim 22,wherein the recess is formed to a depth deeper than a lower surface ofthe source area and the drain area.
 24. The method for manufacturing asemiconductor device of claim 22, wherein forming the source area anddrain area comprises a source/drain ion implantation on thesemiconductor substrate.
 25. The method for manufacturing a gate of asemiconductor device according to claim 22, wherein the insulation layeris formed to have a thickness of approximately 100 to 200 Å from asurface of the semiconductor substrate.
 26. The method for manufacturinga gate of a semiconductor device according to claim 22, wherein theinsulation layer has a width of approximately ⅕ to ½ of a criticaldimension of the gate.
 27. The method for manufacturing a gate of asemiconductor device according to claim 22, wherein the insulation layeris formed such that a lower surface thereof is positioned substantiallysimilar to a lower surface of the source area.